Description
The bibliometric analysis reveals the following facts:
TSMC has issued 5,193 patents to the USPTO during 2000 and 2012.
TSMC has issued a significantly large portion of patents (3,397) in the technology field of 257, which is Active solid-state devices (e.g., transistors, solid-state diodes).
Under this technology field, TSMC has issued the sixth most patents since 2007 among 2,993 assignees.
Taiwan Semiconductor Manufacturing
Company: Competitor Analysis
Artificial Intelligence Lab, University of Arizona
Dr. Hsinchun Chen
Outline
Outline
•
Bibliometric Analysis
•
Citation Network Analysis
Assignee!le"el Analysis
#n"entor!le"el Analysis
•
Tec$nology Topic Analysis
Topics of TSMC
Topics in t$e tec$nology field of %&' of t$e (S )atent Classification
Topic comparisons between TSMC and Competitors
•
Conclusions
%
*
B#B+#OM,T-#C ANA+.S#S
B#B+#OM,T-#C ANA+.S#S
T$e bibliometric analysis re"eals t$e following facts:
• TSMC $as issued &/01* patents to t$e (S)TO during %222 and
%20%3
• TSMC $as issued a significantly large portion of patents 4*/*1'5 in
t$e tec$nology field of %&'/ w$ic$ is Active solid-state devices (e.g.,
transistors, solid-state diodes3
• (nder t$is tec$nology field/ TSMC $as issued t$e si6t$ most
patents since %22' among %/11* assignees3
Taiwan Semiconductor Manufacturing Company 4TSMC5
Taiwan Semiconductor Manufacturing Company 4TSMC5
•Top 02 tec$nology fields of TSMC 4(S )atent Classification 7irst!+e"el
Categories5
•8ata collection for patents in (S )atent Classification of %&'
9
Rank Technology Field
Number of
Patents*
1 257:Active solid-state devices (e.g., transistors, solid-state diodes) 3,397
2 438:Semicondctor device man!actring: "rocess 2,#72
3
43$:%adiation imager& c'emistr&: "rocess, com"osition, or "rodct
t'ereo!
325
4 3#5:Static in!ormation storage and retrieval 2#2
5 7$$
ata "rocessing: generic control s&stems or s"eci)c a""lications 2$9
# 21#:*tc'ing a s+strate: "rocesses 128
7
71#ata "rocessing: design and anal&sis o! circit or semicondctor
mas,
122
8 134:-leaning and li.id contact /it' solids 11$
9 3#1:*lectricit&: electrical s&stems and devices 1$#
1$
327:0iscellaneos active electrical nonlinear devices, circits, and
s&stems
1$5
Assignee Period # of Patents # of Inventors
1S0- 2$$$-2$12 5,193 #,##$
: A patent can belong to more t$an one classification category3
:: Name "ariations of assignees were resol"ed by N+)!based fu;;y string matc$ing3 T$e total number of assignees
$as been reduced from 9/&0' to %/11*3 4See Appendi6 053
Technology
Field
Period # of Patents # of Inventors # of Assignees** # of Countries
257 2$$7-2$12 59,471 51,972 2,993 52
Numbers of patents between %222 and %20%
Numbers of patents between %222 and %20%
&
• TSMC issued t$e largest patents of &0% in %2203 Since t$en/ t$e company issues
around 9&2 patents e"ery year3
• T$e trend analysis s$ows t$e slig$t decreases in patenting acti"ities between %22<
and %2003 #n particular/ t$ere was a big drop in %2213
Top %2 assignees in t$e tec$nology field of %&'
Top %2 assignees in t$e tec$nology field of %&'
•
T$ere are %/11* assignees between %22' and %20%3
8uring t$e past fi"e years/ TSMC $as issued t$e si6t$ largest patents
40/%2*5 to t$e field of %&'3
0/*=& in"entors of TSMC are in"ol"ed in t$ese patents3
Rank Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2 4nternational 5siness 0ac'ines -or"oration 6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
7 4n)neon 1ec'nologies A: (* 1,2$$
8 4ntel -or"oration 6S 1,1$7
9 ;&ni< Semicondctor, 4nc. 3% 944
1$ 8anasonic -or"oration 78 772
11 1ereescale Semicondctor, 4nc, 2
12 -ree, 4nc. 2
13 Semicondctor *nerg& 2a+orator& -o., 2td. 2
14 Silicon/are 8recision 4ndstries, -o. 2td. 2
15 Samsng *lectronics -o., 2td. 2
7indings from citation network analysis
7indings from citation network analysis
•
#n terms of a simple measure ! t$e number of patents/ TSMC
was ranked =
t$
3 >owe"er/ w$en measuring ?uality of patents
by network metrics of 'age(an& and )et*eenness Centrality/
we obser"e t$at TSMC $as issued $ig$er ?uality 4important
and influential5 patents t$an ot$er competitors suc$ as Micron
Tec$nolog#/ 3a!us$iki 3ais$a Tos$i!a/ and
Semiconductor Energ# La!orator#3
•
#n particular/ Chen-Hua, $u is a key in"entor of TSMC3
Chen-Hua, $u was ranked 9
t$
and 0%
t$
in terms of betweenness centrality
and )age-ank respecti"ely3
•
@e also obser"e t$at IBM and Semiconductor Energ# La!.
$a"e significantly well formed in"entors networks3
0<
01
T,C>NO+OC. TO)#C ANA+.S#S
T,C>NO+OC. TO)#C ANA+.S#S
Topic analyses re"eal t$at TSMC $as mostly in"ested in t$e
following t$ree topics:
•semiconductor substrateDgate electrode 4%222E%2205/
•semiconductor manufacturingDsemiconductor wafer 4%22=!%22'5/ and
•semiconductor de"iceDdrain region 4around %200!%20%5
TSMC $as similar tec$nology topics wit$ Samsung Electronics/ IBM/
and Micron Tec$nolog#3
• Bapanese companies suc$ as Tos$i!a and Semiconductor
Energ# La!. >a"e t$eir uni?ue tec$nology topics3
Topic Analysis on patents of TSMC
Topic Analysis on patents of TSMC
%2
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
:::: 7or e6ample/ a topic of Fsemiconductor de"iceDdrain
region 4&'D&*=5G marked by a red star is related wit$ &*=
patents in total/ and t$is topic was peaked around %200
wit$ &' patents3 +ikewise/ Fsemiconductor
manufacturingDsemiconductor wafer 402*D12*5G marked
by a blue star means t$at t$ere are 12* patents
associated wit$ t$is topic and it was popular around
%22&E%22= wit$ 02* of patents3
%% maHor topics were identified3 & topics were
popular in %2003 4See Slide %25
• @e obser"e from t$e topic analysis t$at before %22' TSMC in"ested a wider range of
tec$nology topics 40& topics5/ since t$en/ t$e company $as narrowed down 4'E<
topics5 its tec$nology fields3
4ear
5
o
.
o
6
P
a
t
e
n
t
s
Topic Analysis on patents of TSMC cont!d
Topic Analysis on patents of TSMC cont!d
%0
• T$ere $as been t$e big t$ree tec$nology topics: semiconductor substrateDgate
electrode 4%222E%2205/ semiconductor manufacturingDsemiconductor wafer 4%22=!
%22'5/ and semiconductor de"iceDdrain region 4around %200!%20%53
• )atents relating to semiconductor de"iceDdrain region $as increased in %2003
4ear
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
:::: 7or e6ample/ a topic of Fsemiconductor de"iceDdrain
region 4&'D&*=5G marked by a red star is related wit$ &*=
patents in total/ and t$is topic was peaked around %200
wit$ &' patents3 +ikewise/ Fsemiconductor
manufacturingDsemiconductor wafer 402*D12*5G marked
by a blue star means t$at t$ere are 12* patents
associated wit$ t$is topic and it was popular around
%22&E%22= wit$ 02* of patents3
5
o
.
o
6
P
a
t
e
n
t
s
•
8escripti"e statistics on clusters
Topic Analysis: on patents of TSMC cont!d
Topic Analysis: on patents of TSMC cont!d
%%
: T$e ,M algorit$m wit$ an entropybased feature selection tec$ni?ue was used3
:: Terms were e6tracted by Marko" c$ain!based N+) tec$ni?ue3
Among %% maHor topics/ & were
popular in %2003
! semiconductor de7ice8drain
region
/ semiconductor de7ice8
semiconductor su!strate
/ semiconductor su!strate8solder
!ump
/ integrated circuit8semiconductor
de7ice
/ acti7e region8S$allo" Trenc$
Isolation
Cluste
r
No"
To#ic $Cluster%
# of
Patents
&ost
Po#ular
'ear
# of Patents
in most #o#ular
'ear
1
semicondctor man!actringAsemicondctor /a!er
(1$3A9$3)
9$3 2$$# 1$3
2 semicondctor deviceAdrain region (57A53#) 53# 2$11 57
3 semicondctor s+strateAgate electrode (75A452) 452 2$$1 75
4
semicondctor /a!erAdal damascene strctre
(#$A4$7)
4$7 2$$2 #$
5 semicondctor s+strateABoating gate (4$A272) 272 2$$1 4$
#
c'emical mec'anical "olis'ingAsemicondctor
s+strate (33A231)
231 2$$2 33
7 drain regionAsemicondctor s+strate (31A23$) 23$ 2$$7 31
8
semicondctor deviceAsemicondctor s+strate
(5$A229)
229 2$11 5$
9 integrated circitAmemor& cell (35A2$9) 2$9 2$1$ 35
1$ semicondctor s+strateAsolder +m" (31A194) 194 2$11 31
11 semicondctor s+strateAimage sensor (43A188) 188 2$1$ 43
12 memor& cellAca"acitor strctre (24A184) 184 2$$2 24
13
semicondctor /a!erAmicroelectronic !a+rication
(31A172)
172 2$$4 31
14 Boating gateAcontrol gate (2#A1#2) 1#2 2$$$ 2#
15 integrated circitAsemicondctor device (25A157) 157 2$11 25
1# silicon nitrideAsemicondctor device (14A115) 115 2$$1 14
17 integrated circitA-0CS image sensor (13A1$9) 1$9 2$$4 13
18 integrated circitAintegrated circit device (12A1$4) 1$4 2$$7 12
19 "rocess c'am+erAsemicondctor "rocessing (2$A97) 97 2$$1 2$
2$ storage deviceAman!actring "rocess (13A9$) 9$ 2$$4 13
21 contact 'oleAdrain region (1$A#9) #9 2$$4 1$
22 active regionAs'allo/ trenc' isolation (9A52) 52 2$11 9
Topic Analysis: on patents in t$e tec$nology field of %&'
Topic Analysis: on patents in t$e tec$nology field of %&'
%*
: T$e $ori;ontal a6is represents t$e time period/ and t$e
"ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular term
( o! patent in popular year/total o! patents"
Topic analysis finds 9& tec$nology topics
between %22' and %20%3 T$e & most popular
topics are as follows:
03 drain region8gate electrode 4090'D=0owe"er/ IBM $as broader topics and more
patents on almost e"ery topic t$an TSMC
$as3
@e obser"e t$at w$ile $a"ing its most
patents on t$e maHor topics IBM $as se"eral
patents related to emerging or less
competiti"e topics3
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ IBM is one of maHor
competitors to TSMC3
Topic Comparison: TSMC and Micron Tec$nolog#
Topic Comparison: TSMC and Micron Tec$nolog#
%'
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per
cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
TSMC and Micron Tec$nolog# $a"e
in"ested similar tec$nology topics3
>owe"er/ Micron Tec$nolog# $as a different
set of tec$nology topics from TSMC3 4See a
dotted s?uare5
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ Micron Tec$nolog# is one maHor competitors to
TSMC3
Topic Comparison: TSMC and Tos$i!a
Topic Comparison: TSMC and Tos$i!a
%<
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per
cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
TSMC and Tos$i!a $a"e "ery different
tec$nology topics3
(nlike TSMC/ Samsung Electronics/ and
IBM/ Tos$i!a $as its uni?ue tec$nology
topics/ w$ic$ may $a"e $ig$ entry barriers3
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ Tos$i!a is not a maHor t$reat to TSMC3
Topic Comparison: TSMC and Semiconductor Energ# La!.
Topic Comparison: TSMC and Semiconductor Energ# La!.
%1
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per
cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
TSMC and Semiconductor Energ# La!.
$a"e "ery different tec$nology topics3
+ike Tos$i!a/ Semiconductor Energ# La!.
$as its uni?ue tec$nology topics different
from topics of ot$er assignees3
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ Semiconductor Energ# La!. is not a maHor t$reat to
TSMC3
Topic Comparison: Top & Assignees
Topic Comparison: Top & Assignees
*2
Red 9cean: )opular tec$nology topics/ $ig$ competition3
Blue 9cean: )opular tec$nology topics/ low competition3
Emerging :reas (Possi!l#): small si;e topics/ but being in"ested
by maHor assignees
@e define * topic areas by analy;ing
t$e top & assigneesG tec$nology
topics3
Red 9cean: Topics in t$is area are
popular among maHor assignees3
>owe"er/ t$ere are $ig$
competitions3
•>ea"ily participated assignees are
TSMC/ IBM/ Samsung Electronics/
and Micron Tec$nolog#3
Blue 9cean: Bapanese companies
$a"e led tec$nology de"elopment in
t$is area3 T$ere seems to e6ist $ig$
entry barriers3
•>ea"ily participated assignees are
Semiconductor Energ# la!./
Tos$i!a/ and Samsung
Electronics3
Emerging areas: MaHor assignees
suc$ as Samsung Electronics/
Micron Tec$nolog#/ IBM/ and
TSMC $a"e started to in"est in t$ese
topic areas3
7indings from Topic Analysis
7indings from Topic Analysis
*0
TSMC
Samsung IBM
Samsung
Micron
Tos$i!a
Semiconductor Energ# La!.
TSMC
Samsung IBM
• TSMC $as competed wit$ Samsung
Electronics/ IBM/ and Micron Tec$nolog#3
• T$ese competitors $a"e "ery similar tec$nology
topics3
• >owe"er/ Tos$i!a and Semiconductor
Energ# La!. (and Samsung Electronics
$a"e t$eir own tec$nology topics wit$ $ig$ entry
barriers3
• Samsung Electronics and Micron
tec$nolog# 4and IBM are t$e top % maHor
assignees t$at $a"e acti"ely in"ested in
possible emerging tec$nology topics3
Micron
Micron
• TSMC $as stayed mostly in red ocean areas3 On t$e ot$er $and/ Tos$i!a and
Semiconductor Energ# La!. $a"e de"eloped t$eir own tec$nology fields3
Alt$oug$ TSMC $as a few patents on possibly emerging topics/ Samsung
Electronics and Micron Tec$nolog# 4and IBM;5 $a"e acti"ely in"ested in
t$ese emerging topics3
: T$ese assignees $a"e relati"ely less patents t$an t$e listed assignees3
Conclusions
Conclusions
• #n t$e tec$nology field of %&'/ TSMC is one of t$e top maHor
assignees in terms of t$e ?uantity of patents and t$e impact of t$em3
TSMC $as issued 0/%2* patents/ w$ic$ is t$e si6t$ largest number3
TSMC is ranked *
rd
by bot$ )age-ank and Betweenness Centrality3
• #n general/ TSMC $as issued $ig$er ?uality 4important and influential5 patents t$an ot$er
assignees suc$ as Micron Tec$nolog#/ 3a!us$iki 3ais$a Tos$i!a/ and
Semiconductor Energ# La!orator#3
TSMC $as in"ested maHor topics/ most of w$ic$ are on $ig$ly competiti"e areas3
• Samsung Electronics/ IBM/ and Micron Tec$nolog# are t$e most t$reatening
competitors3
• TSMC $as less in"ested in emerging topics t$an Samsung Electronics/ Micron
Tec$nolog#/ and IBM3
(nlike Tos$i!a and Semiconductor Energ# La!./ it seems t$at TSMC does not
$a"e its uni?ue tec$nology topics3
• #t would be recommended t$at TSMC s$ould de"elop its uni?ue
tec$nology fields like Tos$i!a and in"est more aggressi"ely in
emerging topics like Samsung and Micron do3
*%
Appendi6 0 Name "ariations
Appendi6 0 Name "ariations
•
T$ere were more t$an =2 ot$er names of FTai"an
Semiconductor Manu6acturing Compan#, Ltd.G3
**
Appendi6 % ! t$e top =2 in"entors by )age-ank
Appendi6 % ! t$e top =2 in"entors by )age-ank
Rank Inventor Assignee
PageRan
k
1
S'n"ei,
DamaEa,i
Semicondctor *nerg& 2a+orator& -o., 2td.
38.4515
#4
2 0att'e/, 1'omas 4llmiteairc'ild Semicondctor -or"oration
1419$98.1
$8
34 ;ilong, H'
4nternational 5siness 0ac'ines
-or"oration
13398#8.1
31
35 ;aining, Dang
4nternational 5siness 0ac'ines
-or"oration
133#927.1
22
3# -'arles, 2in 5ridge Semicondctor -or"oration
1299214.9
#8
37 7n ;o, 7ang 2: *lectronics, 4nc.
1244#75.9
19
38 ;siang 2an, 2ng 0acroni< 4nternational -o. 2td
12$5797.7
18
39 5rian, (o&le 4ntel -or"oration
1198919.5
78
4$
%onald 8atric,,
;emoeller
Am,or 1ec'nolog&, 4nc.
1197329.4
11
41 (ong-;o, 2ee Samsng *lectronics -o., 2td.
119#$#$.2
#9
42 S,ianto, %sli Am,or 1ec'nolog&, 4nc.
1173884.3
##
43 5elgacem, ;a+a 1essera, 4nc.
11#9#29.#
72
44 >-2iang, Dang
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
1157142.5
84
45 Sn 3&ng, 3im 2: 4nnote, -o., 2td.
1148#82.5
25
4# -'eng-1ien, 2ai >o H'n 8recision 4ndstr& (S'en H'en) -o.,
2td.
1139898.5
53
48 Scott, 2ist 4ntel -or"oration
11385$1.7
$3
49
rdon, ;aller 0icron 1ec'nolog&, 4nc.
1135245.2
25
5$ ;&n 3&ong, -'o 2: 4nnote, -o., 2td.
113$59#.5
25
5$ 7n ;o, 7ang 2: 4nnote, -o., 2td.
113$59#.5
25
5$ Sn 3&ng, 3im 2: *lectronics, 4nc.
113$59#.5
25
5$ ;&n 3&ong, -'o 2: *lectronics, 4nc.
113$59#.5
25
54 5rce, (oris
4nternational 5siness 0ac'ines
-or"oration
11$9285.7
79
55 7o'n, 1reEEa -!er Assett 2td. 2.2.-.
1$91974.9
$2
5# S'eng 1eng, ;s S'ar" 2a+oratories o! America, 4nc.
1$7$973.4
93
57 9en--'i', -'io
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
1$59$#5.$
47
58 Sman, (atta 4ntel -or"oration
1$558$7.4
1
59 H'ong-Giang, ;e
4nternational 5siness 0ac'ines
-or"oration
1$4$715.2
18
#$ 0ic'ael, 3rames 8'ili"s 2mileds 2ig'ting -om"an&, 22-
1$$95$8.9
59
Appendi6 9 Topics under (S Classification of %&'
Appendi6 9 Topics under (S Classification of %&'
Cluste
r
No"
To#ics
# of
Patents
&ost
Po#ular
'ear
1 drain regionAgate electrode (1417A#189) #,189 2$11
2
semicondctor materialAsemicondctor strctre
(1$9$A4582)
4,582 2$1$
3
semicondctor "ac,ageAintegrated circit
(11$5A453$)
4,53$ 2$11
4 t'in )lmAintegrated circit (974A44$2) 4,4$2 2$$7
5
lig't emitting deviceAlig't emitting diode
(11#2A422$)
4,22$ 2$11
# integrated circitAsemicondctor /a!er (7#8A37#2) 3,7#2 2$$7
7 semicondctor c'i"Aintegrated circit (8#9A3744) 3,744 2$11
8 'eat sin,Asemicondctor c'i" (743A34$1) 3,4$1 2$1$
9 inslating )lmA'eat treatment (75#A3217) 3,217 2$11
1$ integrated circitA'ard mas, (452A2###) 2,### 2$$7
11 gate electrodeAinslating )lm (711A2577) 2,577 2$11
12 integrated circitAmemor& cell (4##A232#) 2,32# 2$$9
13 contact 'oleAgate electrode (5$2A2$79) 2,$79 2$1$
14 gate electrodeAdrain electrode (47#A17$8) 1,7$8 2$1$
15 general !ormlaAelectronic device (417A1479) 1,479 2$11
1# t'in )lm transistorAinslating )lm (334A13$8) 1,3$8 2$1$
17 inslating )lmAsemicondctor c'i" (285A1$93) 1,$93 2$11
18 interconnect strctreAintegrated circit (2#4A1$#8) 1,$#8 2$1$
19 lig't emitting deviceAlig't emitting (193A7$4) 7$4 2$11
2$ inslating )lmAgate electrode (132A575) 575 2$11
21 memor& cellAactive region (132A5$#) 5$# 2$11
22 semicondctor strctreAemitting device (138A391) 391 2$11
23 condctive materialAdielectric material (#9A297) 297 2$$7
Cluster
No"
To#ics
# of
Patents
&ost
Po#ular
'ear
24 ""er electrodeAlo/er electrode (73A281) 281 2$1$
25 .antm /ellAt'in )lm transistor (7$A259) 259 2$1$
2# electronic deviceA'eat sin, (49A221) 221 2$1$
27 memor& cellAmemor& device (43A185) 185 2$1$
28 gate electrodeAdrain electrode (48A174) 174 2$1$
29 >ield-eIect transistorAgate electrode (55A1#3) 1#3 2$1$
3$ Boating gateAmemor& cell (42A139) 139 2$11
31 gate electrodeAmetal silicide (33A13#) 13# 2$1$
32 semicondctor c'i"A""er sr!ace (39A133) 133 2$1$
33 electronic deviceAgate electrode (35A12$) 12$ 2$11
34 'eat sin,Aintegrated circit (24A1$4) 1$4 2$$8
35 gate electrodeAt'in )lm transistor (25A92) 92 2$1$
3# gate electrodeAstrained silicon (23A8#) 8# 2$11
37 memor& cellAmemor& device (18A77) 77 2$11
38 memor& deviceAdrain region (17A7#) 7# 2$11
39
electrical connectionAmlti"le "o/er mode
(25A73)
73 2$1$
4$ control gateABoating gate (2$A##) ## 2$$9
41 integrated circitAgallim nitride (22A#2) #2 2$11
42 lo/er electrodeA""er electrode (15A57) 57 2$11
43 Boating gateAcontrol gate (14A55) 55 2$12
44 ca"acitor strctreAt'in )lm (13A49) 49 2$$9
45 control signalAin"t signal (9A24) 24 2$1$
doc_846402721.ppt
The bibliometric analysis reveals the following facts:
TSMC has issued 5,193 patents to the USPTO during 2000 and 2012.
TSMC has issued a significantly large portion of patents (3,397) in the technology field of 257, which is Active solid-state devices (e.g., transistors, solid-state diodes).
Under this technology field, TSMC has issued the sixth most patents since 2007 among 2,993 assignees.
Taiwan Semiconductor Manufacturing
Company: Competitor Analysis
Artificial Intelligence Lab, University of Arizona
Dr. Hsinchun Chen
Outline
Outline
•
Bibliometric Analysis
•
Citation Network Analysis
Assignee!le"el Analysis
#n"entor!le"el Analysis
•
Tec$nology Topic Analysis
Topics of TSMC
Topics in t$e tec$nology field of %&' of t$e (S )atent Classification
Topic comparisons between TSMC and Competitors
•
Conclusions
%
*
B#B+#OM,T-#C ANA+.S#S
B#B+#OM,T-#C ANA+.S#S
T$e bibliometric analysis re"eals t$e following facts:
• TSMC $as issued &/01* patents to t$e (S)TO during %222 and
%20%3
• TSMC $as issued a significantly large portion of patents 4*/*1'5 in
t$e tec$nology field of %&'/ w$ic$ is Active solid-state devices (e.g.,
transistors, solid-state diodes3
• (nder t$is tec$nology field/ TSMC $as issued t$e si6t$ most
patents since %22' among %/11* assignees3
Taiwan Semiconductor Manufacturing Company 4TSMC5
Taiwan Semiconductor Manufacturing Company 4TSMC5
•Top 02 tec$nology fields of TSMC 4(S )atent Classification 7irst!+e"el
Categories5
•8ata collection for patents in (S )atent Classification of %&'
9
Rank Technology Field
Number of
Patents*
1 257:Active solid-state devices (e.g., transistors, solid-state diodes) 3,397
2 438:Semicondctor device man!actring: "rocess 2,#72
3
43$:%adiation imager& c'emistr&: "rocess, com"osition, or "rodct
t'ereo!
325
4 3#5:Static in!ormation storage and retrieval 2#2
5 7$$
ata "rocessing: generic control s&stems or s"eci)c a""lications 2$9# 21#:*tc'ing a s+strate: "rocesses 128
7
71#
ata "rocessing: design and anal&sis o! circit or semicondctormas,
122
8 134:-leaning and li.id contact /it' solids 11$
9 3#1:*lectricit&: electrical s&stems and devices 1$#
1$
327:0iscellaneos active electrical nonlinear devices, circits, and
s&stems
1$5
Assignee Period # of Patents # of Inventors
1S0- 2$$$-2$12 5,193 #,##$
: A patent can belong to more t$an one classification category3
:: Name "ariations of assignees were resol"ed by N+)!based fu;;y string matc$ing3 T$e total number of assignees
$as been reduced from 9/&0' to %/11*3 4See Appendi6 053
Technology
Field
Period # of Patents # of Inventors # of Assignees** # of Countries
257 2$$7-2$12 59,471 51,972 2,993 52
Numbers of patents between %222 and %20%
Numbers of patents between %222 and %20%
&
• TSMC issued t$e largest patents of &0% in %2203 Since t$en/ t$e company issues
around 9&2 patents e"ery year3
• T$e trend analysis s$ows t$e slig$t decreases in patenting acti"ities between %22<
and %2003 #n particular/ t$ere was a big drop in %2213
Top %2 assignees in t$e tec$nology field of %&'
Top %2 assignees in t$e tec$nology field of %&'
•
T$ere are %/11* assignees between %22' and %20%3
8uring t$e past fi"e years/ TSMC $as issued t$e si6t$ largest patents
40/%2*5 to t$e field of %&'3
0/*=& in"entors of TSMC are in"ol"ed in t$ese patents3
Rank Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2 4nternational 5siness 0ac'ines -or"oration 6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
7 4n)neon 1ec'nologies A: (* 1,2$$
8 4ntel -or"oration 6S 1,1$7
9 ;&ni< Semicondctor, 4nc. 3% 944
1$ 8anasonic -or"oration 78 772
11 1ereescale Semicondctor, 4nc, 2
12 -ree, 4nc. 2
13 Semicondctor *nerg& 2a+orator& -o., 2td. 2
14 Silicon/are 8recision 4ndstries, -o. 2td. 2
15 Samsng *lectronics -o., 2td. 2
7indings from citation network analysis
7indings from citation network analysis
•
#n terms of a simple measure ! t$e number of patents/ TSMC
was ranked =
t$
3 >owe"er/ w$en measuring ?uality of patents
by network metrics of 'age(an& and )et*eenness Centrality/
we obser"e t$at TSMC $as issued $ig$er ?uality 4important
and influential5 patents t$an ot$er competitors suc$ as Micron
Tec$nolog#/ 3a!us$iki 3ais$a Tos$i!a/ and
Semiconductor Energ# La!orator#3
•
#n particular/ Chen-Hua, $u is a key in"entor of TSMC3
Chen-Hua, $u was ranked 9
t$
and 0%
t$
in terms of betweenness centrality
and )age-ank respecti"ely3
•
@e also obser"e t$at IBM and Semiconductor Energ# La!.
$a"e significantly well formed in"entors networks3
0<
01
T,C>NO+OC. TO)#C ANA+.S#S
T,C>NO+OC. TO)#C ANA+.S#S
Topic analyses re"eal t$at TSMC $as mostly in"ested in t$e
following t$ree topics:
•semiconductor substrateDgate electrode 4%222E%2205/
•semiconductor manufacturingDsemiconductor wafer 4%22=!%22'5/ and
•semiconductor de"iceDdrain region 4around %200!%20%5
TSMC $as similar tec$nology topics wit$ Samsung Electronics/ IBM/
and Micron Tec$nolog#3
• Bapanese companies suc$ as Tos$i!a and Semiconductor
Energ# La!. >a"e t$eir uni?ue tec$nology topics3
Topic Analysis on patents of TSMC
Topic Analysis on patents of TSMC
%2
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
:::: 7or e6ample/ a topic of Fsemiconductor de"iceDdrain
region 4&'D&*=5G marked by a red star is related wit$ &*=
patents in total/ and t$is topic was peaked around %200
wit$ &' patents3 +ikewise/ Fsemiconductor
manufacturingDsemiconductor wafer 402*D12*5G marked
by a blue star means t$at t$ere are 12* patents
associated wit$ t$is topic and it was popular around
%22&E%22= wit$ 02* of patents3
%% maHor topics were identified3 & topics were
popular in %2003 4See Slide %25
• @e obser"e from t$e topic analysis t$at before %22' TSMC in"ested a wider range of
tec$nology topics 40& topics5/ since t$en/ t$e company $as narrowed down 4'E<
topics5 its tec$nology fields3
4ear
5
o
.
o
6
P
a
t
e
n
t
s
Topic Analysis on patents of TSMC cont!d
Topic Analysis on patents of TSMC cont!d
%0
• T$ere $as been t$e big t$ree tec$nology topics: semiconductor substrateDgate
electrode 4%222E%2205/ semiconductor manufacturingDsemiconductor wafer 4%22=!
%22'5/ and semiconductor de"iceDdrain region 4around %200!%20%53
• )atents relating to semiconductor de"iceDdrain region $as increased in %2003
4ear
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
:::: 7or e6ample/ a topic of Fsemiconductor de"iceDdrain
region 4&'D&*=5G marked by a red star is related wit$ &*=
patents in total/ and t$is topic was peaked around %200
wit$ &' patents3 +ikewise/ Fsemiconductor
manufacturingDsemiconductor wafer 402*D12*5G marked
by a blue star means t$at t$ere are 12* patents
associated wit$ t$is topic and it was popular around
%22&E%22= wit$ 02* of patents3
5
o
.
o
6
P
a
t
e
n
t
s
•
8escripti"e statistics on clusters
Topic Analysis: on patents of TSMC cont!d
Topic Analysis: on patents of TSMC cont!d
%%
: T$e ,M algorit$m wit$ an entropybased feature selection tec$ni?ue was used3
:: Terms were e6tracted by Marko" c$ain!based N+) tec$ni?ue3
Among %% maHor topics/ & were
popular in %2003
! semiconductor de7ice8drain
region
/ semiconductor de7ice8
semiconductor su!strate
/ semiconductor su!strate8solder
!ump
/ integrated circuit8semiconductor
de7ice
/ acti7e region8S$allo" Trenc$
Isolation
Cluste
r
No"
To#ic $Cluster%
# of
Patents
&ost
Po#ular
'ear
# of Patents
in most #o#ular
'ear
1
semicondctor man!actringAsemicondctor /a!er
(1$3A9$3)
9$3 2$$# 1$3
2 semicondctor deviceAdrain region (57A53#) 53# 2$11 57
3 semicondctor s+strateAgate electrode (75A452) 452 2$$1 75
4
semicondctor /a!erAdal damascene strctre
(#$A4$7)
4$7 2$$2 #$
5 semicondctor s+strateABoating gate (4$A272) 272 2$$1 4$
#
c'emical mec'anical "olis'ingAsemicondctor
s+strate (33A231)
231 2$$2 33
7 drain regionAsemicondctor s+strate (31A23$) 23$ 2$$7 31
8
semicondctor deviceAsemicondctor s+strate
(5$A229)
229 2$11 5$
9 integrated circitAmemor& cell (35A2$9) 2$9 2$1$ 35
1$ semicondctor s+strateAsolder +m" (31A194) 194 2$11 31
11 semicondctor s+strateAimage sensor (43A188) 188 2$1$ 43
12 memor& cellAca"acitor strctre (24A184) 184 2$$2 24
13
semicondctor /a!erAmicroelectronic !a+rication
(31A172)
172 2$$4 31
14 Boating gateAcontrol gate (2#A1#2) 1#2 2$$$ 2#
15 integrated circitAsemicondctor device (25A157) 157 2$11 25
1# silicon nitrideAsemicondctor device (14A115) 115 2$$1 14
17 integrated circitA-0CS image sensor (13A1$9) 1$9 2$$4 13
18 integrated circitAintegrated circit device (12A1$4) 1$4 2$$7 12
19 "rocess c'am+erAsemicondctor "rocessing (2$A97) 97 2$$1 2$
2$ storage deviceAman!actring "rocess (13A9$) 9$ 2$$4 13
21 contact 'oleAdrain region (1$A#9) #9 2$$4 1$
22 active regionAs'allo/ trenc' isolation (9A52) 52 2$11 9
Topic Analysis: on patents in t$e tec$nology field of %&'
Topic Analysis: on patents in t$e tec$nology field of %&'
%*
: T$e $ori;ontal a6is represents t$e time period/ and t$e
"ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular term
( o! patent in popular year/total o! patents"
Topic analysis finds 9& tec$nology topics
between %22' and %20%3 T$e & most popular
topics are as follows:
03 drain region8gate electrode 4090'D=0owe"er/ IBM $as broader topics and more
patents on almost e"ery topic t$an TSMC
$as3
@e obser"e t$at w$ile $a"ing its most
patents on t$e maHor topics IBM $as se"eral
patents related to emerging or less
competiti"e topics3
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ IBM is one of maHor
competitors to TSMC3
Topic Comparison: TSMC and Micron Tec$nolog#
Topic Comparison: TSMC and Micron Tec$nolog#
%'
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per
cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
TSMC and Micron Tec$nolog# $a"e
in"ested similar tec$nology topics3
>owe"er/ Micron Tec$nolog# $as a different
set of tec$nology topics from TSMC3 4See a
dotted s?uare5
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ Micron Tec$nolog# is one maHor competitors to
TSMC3
Topic Comparison: TSMC and Tos$i!a
Topic Comparison: TSMC and Tos$i!a
%<
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per
cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
TSMC and Tos$i!a $a"e "ery different
tec$nology topics3
(nlike TSMC/ Samsung Electronics/ and
IBM/ Tos$i!a $as its uni?ue tec$nology
topics/ w$ic$ may $a"e $ig$ entry barriers3
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ Tos$i!a is not a maHor t$reat to TSMC3
Topic Comparison: TSMC and Semiconductor Energ# La!.
Topic Comparison: TSMC and Semiconductor Energ# La!.
%1
: T$e $ori;ontal a6is represents t$e time period/ and
t$e "ertical a6is s$ows t$e number of patents3
:: T$e bigger circle/ t$e more patents3
::: T$e top % most popular terms are s$own per
cluster3
:::: Clusters are represented as follows:
the most popular term/the second most popular
term ( o! patent in popular year/total o! patents"
TSMC and Semiconductor Energ# La!.
$a"e "ery different tec$nology topics3
+ike Tos$i!a/ Semiconductor Energ# La!.
$as its uni?ue tec$nology topics different
from topics of ot$er assignees3
Ran
k
Assignee
Countr
y
# of
Patents
1 Samsng *lectronics -o., 2td. 3% 3,1#2
2
4nternational 5siness 0ac'ines
-or"oration
6S 2,745
3 0icron 1ec'nolog&, 4nc. 6S 2,22#
4 3a+s'i,i 3ais'a 1os'i+a 78 1,744
5 Semicondctor *nerg& 2a+orator& -o., 2td. 78 1,374
#
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
19 1,2$3
• #n terms of tec$nology topics/ Semiconductor Energ# La!. is not a maHor t$reat to
TSMC3
Topic Comparison: Top & Assignees
Topic Comparison: Top & Assignees
*2
Red 9cean: )opular tec$nology topics/ $ig$ competition3
Blue 9cean: )opular tec$nology topics/ low competition3
Emerging :reas (Possi!l#): small si;e topics/ but being in"ested
by maHor assignees
@e define * topic areas by analy;ing
t$e top & assigneesG tec$nology
topics3
Red 9cean: Topics in t$is area are
popular among maHor assignees3
>owe"er/ t$ere are $ig$
competitions3
•>ea"ily participated assignees are
TSMC/ IBM/ Samsung Electronics/
and Micron Tec$nolog#3
Blue 9cean: Bapanese companies
$a"e led tec$nology de"elopment in
t$is area3 T$ere seems to e6ist $ig$
entry barriers3
•>ea"ily participated assignees are
Semiconductor Energ# la!./
Tos$i!a/ and Samsung
Electronics3
Emerging areas: MaHor assignees
suc$ as Samsung Electronics/
Micron Tec$nolog#/ IBM/ and
TSMC $a"e started to in"est in t$ese
topic areas3
7indings from Topic Analysis
7indings from Topic Analysis
*0
TSMC
Samsung IBM
Samsung
Micron
Tos$i!a
Semiconductor Energ# La!.
TSMC
Samsung IBM
• TSMC $as competed wit$ Samsung
Electronics/ IBM/ and Micron Tec$nolog#3
• T$ese competitors $a"e "ery similar tec$nology
topics3
• >owe"er/ Tos$i!a and Semiconductor
Energ# La!. (and Samsung Electronics
$a"e t$eir own tec$nology topics wit$ $ig$ entry
barriers3
• Samsung Electronics and Micron
tec$nolog# 4and IBM
are t$e top % maHorassignees t$at $a"e acti"ely in"ested in
possible emerging tec$nology topics3
Micron
Micron
• TSMC $as stayed mostly in red ocean areas3 On t$e ot$er $and/ Tos$i!a and
Semiconductor Energ# La!. $a"e de"eloped t$eir own tec$nology fields3
Alt$oug$ TSMC $as a few patents on possibly emerging topics/ Samsung
Electronics and Micron Tec$nolog# 4and IBM;5 $a"e acti"ely in"ested in
t$ese emerging topics3
: T$ese assignees $a"e relati"ely less patents t$an t$e listed assignees3
Conclusions
Conclusions
• #n t$e tec$nology field of %&'/ TSMC is one of t$e top maHor
assignees in terms of t$e ?uantity of patents and t$e impact of t$em3
TSMC $as issued 0/%2* patents/ w$ic$ is t$e si6t$ largest number3
TSMC is ranked *
rd
by bot$ )age-ank and Betweenness Centrality3
• #n general/ TSMC $as issued $ig$er ?uality 4important and influential5 patents t$an ot$er
assignees suc$ as Micron Tec$nolog#/ 3a!us$iki 3ais$a Tos$i!a/ and
Semiconductor Energ# La!orator#3
TSMC $as in"ested maHor topics/ most of w$ic$ are on $ig$ly competiti"e areas3
• Samsung Electronics/ IBM/ and Micron Tec$nolog# are t$e most t$reatening
competitors3
• TSMC $as less in"ested in emerging topics t$an Samsung Electronics/ Micron
Tec$nolog#/ and IBM3
(nlike Tos$i!a and Semiconductor Energ# La!./ it seems t$at TSMC does not
$a"e its uni?ue tec$nology topics3
• #t would be recommended t$at TSMC s$ould de"elop its uni?ue
tec$nology fields like Tos$i!a and in"est more aggressi"ely in
emerging topics like Samsung and Micron do3
*%
Appendi6 0 Name "ariations
Appendi6 0 Name "ariations
•
T$ere were more t$an =2 ot$er names of FTai"an
Semiconductor Manu6acturing Compan#, Ltd.G3
**
Appendi6 % ! t$e top =2 in"entors by )age-ank
Appendi6 % ! t$e top =2 in"entors by )age-ank
Rank Inventor Assignee
PageRan
k
1
S'n"ei,
DamaEa,i
Semicondctor *nerg& 2a+orator& -o., 2td.
38.4515
#4
2 0att'e/, 1'omas 4llmiteairc'ild Semicondctor -or"oration
1419$98.1
$8
34 ;ilong, H'
4nternational 5siness 0ac'ines
-or"oration
13398#8.1
31
35 ;aining, Dang
4nternational 5siness 0ac'ines
-or"oration
133#927.1
22
3# -'arles, 2in 5ridge Semicondctor -or"oration
1299214.9
#8
37 7n ;o, 7ang 2: *lectronics, 4nc.
1244#75.9
19
38 ;siang 2an, 2ng 0acroni< 4nternational -o. 2td
12$5797.7
18
39 5rian, (o&le 4ntel -or"oration
1198919.5
78
4$
%onald 8atric,,
;emoeller
Am,or 1ec'nolog&, 4nc.
1197329.4
11
41 (ong-;o, 2ee Samsng *lectronics -o., 2td.
119#$#$.2
#9
42 S,ianto, %sli Am,or 1ec'nolog&, 4nc.
1173884.3
##
43 5elgacem, ;a+a 1essera, 4nc.
11#9#29.#
72
44 >-2iang, Dang
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
1157142.5
84
45 Sn 3&ng, 3im 2: 4nnote, -o., 2td.
1148#82.5
25
4# -'eng-1ien, 2ai >o H'n 8recision 4ndstr& (S'en H'en) -o.,
2td.
1139898.5
53
48 Scott, 2ist 4ntel -or"oration
11385$1.7
$3
49
rdon, ;aller 0icron 1ec'nolog&, 4nc.1135245.2
25
5$ ;&n 3&ong, -'o 2: 4nnote, -o., 2td.
113$59#.5
25
5$ 7n ;o, 7ang 2: 4nnote, -o., 2td.
113$59#.5
25
5$ Sn 3&ng, 3im 2: *lectronics, 4nc.
113$59#.5
25
5$ ;&n 3&ong, -'o 2: *lectronics, 4nc.
113$59#.5
25
54 5rce, (oris
4nternational 5siness 0ac'ines
-or"oration
11$9285.7
79
55 7o'n, 1reEEa -!er Assett 2td. 2.2.-.
1$91974.9
$2
5# S'eng 1eng, ;s S'ar" 2a+oratories o! America, 4nc.
1$7$973.4
93
57 9en--'i', -'io
1ai/an Semicondctor 0an!actring
-om"an&, 2td.
1$59$#5.$
47
58 Sman, (atta 4ntel -or"oration
1$558$7.4
1
59 H'ong-Giang, ;e
4nternational 5siness 0ac'ines
-or"oration
1$4$715.2
18
#$ 0ic'ael, 3rames 8'ili"s 2mileds 2ig'ting -om"an&, 22-
1$$95$8.9
59
Appendi6 9 Topics under (S Classification of %&'
Appendi6 9 Topics under (S Classification of %&'
Cluste
r
No"
To#ics
# of
Patents
&ost
Po#ular
'ear
1 drain regionAgate electrode (1417A#189) #,189 2$11
2
semicondctor materialAsemicondctor strctre
(1$9$A4582)
4,582 2$1$
3
semicondctor "ac,ageAintegrated circit
(11$5A453$)
4,53$ 2$11
4 t'in )lmAintegrated circit (974A44$2) 4,4$2 2$$7
5
lig't emitting deviceAlig't emitting diode
(11#2A422$)
4,22$ 2$11
# integrated circitAsemicondctor /a!er (7#8A37#2) 3,7#2 2$$7
7 semicondctor c'i"Aintegrated circit (8#9A3744) 3,744 2$11
8 'eat sin,Asemicondctor c'i" (743A34$1) 3,4$1 2$1$
9 inslating )lmA'eat treatment (75#A3217) 3,217 2$11
1$ integrated circitA'ard mas, (452A2###) 2,### 2$$7
11 gate electrodeAinslating )lm (711A2577) 2,577 2$11
12 integrated circitAmemor& cell (4##A232#) 2,32# 2$$9
13 contact 'oleAgate electrode (5$2A2$79) 2,$79 2$1$
14 gate electrodeAdrain electrode (47#A17$8) 1,7$8 2$1$
15 general !ormlaAelectronic device (417A1479) 1,479 2$11
1# t'in )lm transistorAinslating )lm (334A13$8) 1,3$8 2$1$
17 inslating )lmAsemicondctor c'i" (285A1$93) 1,$93 2$11
18 interconnect strctreAintegrated circit (2#4A1$#8) 1,$#8 2$1$
19 lig't emitting deviceAlig't emitting (193A7$4) 7$4 2$11
2$ inslating )lmAgate electrode (132A575) 575 2$11
21 memor& cellAactive region (132A5$#) 5$# 2$11
22 semicondctor strctreAemitting device (138A391) 391 2$11
23 condctive materialAdielectric material (#9A297) 297 2$$7
Cluster
No"
To#ics
# of
Patents
&ost
Po#ular
'ear
24 ""er electrodeAlo/er electrode (73A281) 281 2$1$
25 .antm /ellAt'in )lm transistor (7$A259) 259 2$1$
2# electronic deviceA'eat sin, (49A221) 221 2$1$
27 memor& cellAmemor& device (43A185) 185 2$1$
28 gate electrodeAdrain electrode (48A174) 174 2$1$
29 >ield-eIect transistorAgate electrode (55A1#3) 1#3 2$1$
3$ Boating gateAmemor& cell (42A139) 139 2$11
31 gate electrodeAmetal silicide (33A13#) 13# 2$1$
32 semicondctor c'i"A""er sr!ace (39A133) 133 2$1$
33 electronic deviceAgate electrode (35A12$) 12$ 2$11
34 'eat sin,Aintegrated circit (24A1$4) 1$4 2$$8
35 gate electrodeAt'in )lm transistor (25A92) 92 2$1$
3# gate electrodeAstrained silicon (23A8#) 8# 2$11
37 memor& cellAmemor& device (18A77) 77 2$11
38 memor& deviceAdrain region (17A7#) 7# 2$11
39
electrical connectionAmlti"le "o/er mode
(25A73)
73 2$1$
4$ control gateABoating gate (2$A##) ## 2$$9
41 integrated circitAgallim nitride (22A#2) #2 2$11
42 lo/er electrodeA""er electrode (15A57) 57 2$11
43 Boating gateAcontrol gate (14A55) 55 2$12
44 ca"acitor strctreAt'in )lm (13A49) 49 2$$9
45 control signalAin"t signal (9A24) 24 2$1$
doc_846402721.ppt